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| SUBMINIATURE PHOTOINTERRUPTER Description The MIR-3301 consists of a Gallium Arsenide in( Detector center ) ( Emitter center ) MIR-3301 Package Dimensions Unit: mm frared emitting diode and a NPN silicon phototransistor built in a black plastic housing. It is a reflective subminiature photointerrupter. 3.40.2 1.80 A D A D B B C C Features l l l l l Compact and thin 1.50.2 2.750.2 MIR-3301 : Compact DIP, long lead type Optimum detecting diatance : 0.8 - 1.0 mm Wavelength : 940nm Visible light cut-off type 15 15 0.50.1 0.65 101.0 0.15 4.0 0~20 0~20 Absolute Maximum Ratings @ TA=25oC Parameter Continuous Forward Current INPUT Reverse Voltage Power Dissipation Collector-emitter breakdown voltage OUTPUT Emitter-Collector breakdown voltage Collector power dissipation Total power dissipation Operating Temperature Range Storage Temperature Range Symbol IF VR Pad V(BR)CEO V(BR)ECO PC PTOT Topr Tstg Minimum Rating Maximum Rating 50 5 75 30 5 75 100 -25oC to + 85oC -40oC to + 100oC Unit mA V mW V V mW mW Lead Soldering Temperature (within 5 sec, minimum 1.6mm from body) at 260oC Unity Opto Technology Co., Ltd. 02/04/2002 MIR-3301 Optical-Electrical Characteristics Parameter Input Output Forward Voltage Reverse Current Collector Dark Current Symbol VF IR Iceo B Ic C D E Response Time (RISE) Response Time (FALL) *2 Leak Current tr tf ILEAK Min . 38 56 80 112 Typ . 1.2 20 20 Max . 1.4 10 100 75 108 151 216 100 100 0.1 S S A Ic=100A,Vce=2V RL=1K,d=1mm IF=4mA,Vce=5V A IF=4mA,Vce=5V Unit . V A nA Test Conditions IF=20mA VR=5V Vce=10V *1 Transfer Characteristics Collector Current *1 THE CONDITION AND ARRANGEMENT OF THE REFLECTIVE OBJECT ARE SHOWN AS FOLLOWING . *2 WITHOUT REFLECTIVE OBJECT. TEST CONDITION AND ARRANGEMENT FOR COLLECTOR CURRENT Al refletive 2 mm-thick glass Device Typical Optical-Electrical Characteristic Curves Forward Current IF (mA) 60 50 40 30 20 10 0 -25 0 25 50 75 100 Power Dissipation (mW) 120 100 80 60 40 20 0 -25 0 25 50 75 100 PTOT Pad , PC Ambient Temperature TA (oC) Fig.1 forward Current VS. Ambient Temperature Forward Current IF (mA) 50 40 30 20 10 0 0 0.5 1 1.5 o Ambient Temperature TA ( C ) Fig.2 Power Dissipation vs. Ambient Temperature Collector Current Ic (A) 600 500 400 300 200 100 0 0 5 10 15 20 Vce=5V Ta=25o C Forward Voltage VF (V) Fig.3 Forward Current VS Forward Voltage Forward Current IF (mA) Fig.4 Collector Current vs. Forward Current Unity Opto Technology Co., Ltd. 02/04/2002 MIR-3301 Typical Optical-Electrical Characteristic Curves Collector Current Ic (A) 350 300 250 200 150 100 50 0 0 2 4 6 8 10 12 1mA Relative Collector Current (%) Ta=25o C IF=10mA 120 100 80 60 40 20 0 -25 0 25 50 75 100 4mA Collector-Emitter Voltage Vce (V) Fig.5 Collector Current vs. Vce Collector Dark Current ICEO Response Time (s) 10-6 10-7 10-8 10 -9 Ambient Temperature TA (oC) Fig.6 Relative Collector Current VS. 100 50 20 10 5 2 1 0.5 0.2 0.1 0.01 0.02 0.05 0.01 0.1 0.1 0.2 0.5 VCE=10V tr tr td ts VCE=2V IC=100gA Ta=25oC 11 2 5 1010 10-10 0 25 50 75 100 Ambient Temperature TA (oC) Fig.7 Collector Dark Current vs. Ambient Temperature Relative Collector Current (%) Relative Sensitivity (%) 100 80 60 40 20 0 700 800 900 1000 1100 1200 Ta=25oC 120 100 80 60 40 20 0 0 1 Load Resistance Rt (K) Fig.8 Response Time vs. Load Resistance IF=4mA VCE=5V TA=25oC 2 3 4 5 6 7 8 9 10 Wavelength (nm) Fig.9 Spectral Sensitivity (Detecting side) Distance (mm) Fig.10 Relative Collector Current vs. Distance between MIR-3301 and Card Test Circuit for Response Time Vcc RL Input RD Input Output Output 10% td tr 90% ts tf Unity Opto Technology Co., Ltd. 02/04/2002 |
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